Photon Emission Microscopy PEM is a highly reliable technique for fault localisation especially for the Failure Analysis of Intergated Ciruits, IC. PEM consists of a high sensitive CCD detector capable of detecting photons. These photons are emitted when an electron-hole pair recombines in affected zone. This technique is often coupled with Optical Beam Induced Resistance Change (OBIRCH) for effective fault locating.
Photon Emission Microscopy is suitable for :
- Determination of Leakage Currents
- Inspection for ESD Failures
- Detection of Junction Leakages
- Measurement of Gate-Oxide Defectives